Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention
As one of the newly introduced resistive random access memory (ReRAM) devices, this paper has shown an in-depth study of conductive-bridging random access memory (CBRAM) for non-volatile memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is evaluated with accurate physical-level model an...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/98317 http://hdl.handle.net/10220/12366 |
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| Institution: | Nanyang Technological University |
| Language: | English |