Synthesis, characterization, and non-volatile memory device application of an N-substituted heteroacene

• Main Authors: Wang, Chengyuan, Wang, Jiangxin, Li, Pei-Zhou, Gao, Junkuo, Tan, Si Yu, Xiong, Wei-Wei, Hu, Benlin, Lee, Pooi See, Zhao, Yanli, Zhang, Qichun
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/102823; http://hdl.handle.net/10220/19135
• Institution: Nanyang Technological University

N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4′-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.