Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes

• Main Authors: Yang, Xuyong, Mutlugun, Evren, Zhao, Yongbiao, Gao, Yuan, Leck, Kheng Swee, Ma, Yanyan, Ke, Lin, Tan, Swee Tiam, Demir, Hilmi Volkan, Sun, Xiao Wei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/102941; http://hdl.handle.net/10220/19202
• Institution: Nanyang Technological University

A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays.