Epitaxial growth of successive CdSe ultrathin films and quantum dot layers on TiO2 nanorod arrays for photo-electrochemical cells

In this work, successive cadmium selenide (CdSe) ultrathin films and quantum dot layers were successfully deposited on TiO2 nanorod arrays by the electrochemical atomic layer epitaxy method (ECALE). The underpotential deposition (UPD) processes of the successive CdSe films and quantum dot layers wer...

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Bibliographic Details
Main Authors: Feng, Shuanglong, Wu, Jin, Hu, Peng, Chen, Ying, Ma, Bing, Peng, Jiangying, Yang, Junyou, Jiang, Hui
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/103151
http://hdl.handle.net/10220/24424
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this work, successive cadmium selenide (CdSe) ultrathin films and quantum dot layers were successfully deposited on TiO2 nanorod arrays by the electrochemical atomic layer epitaxy method (ECALE). The underpotential deposition (UPD) processes of the successive CdSe films and quantum dot layers were recorded in detail. The photo-electrochemical properties of the CdSe coated TiO2 nanorod array electrodes were also investigated, and the maximum current density reached 14.6 mA cm−2 under one sun (AM 1.5G, 100 mW cm−2). Using the ECALE method to grow a buffer layer between quantum dots and their supporting material will be useful for other energy-providing materials.