Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application

A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by trans...

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Main Authors: Shukla, Sudhanshu, Yang, Zhi, Wang, Minqiang, Zhu, Yue, Deng, Jianping, Ge, Hu, Wang, Xingzhi, Xiong, Qihua
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Online Access:https://hdl.handle.net/10356/103352
http://hdl.handle.net/10220/38748
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1033522023-02-28T19:43:57Z Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application Shukla, Sudhanshu Yang, Zhi Wang, Minqiang Zhu, Yue Deng, Jianping Ge, Hu Wang, Xingzhi Xiong, Qihua School of Electrical and Electronic Engineering School of Materials Science & Engineering School of Physical and Mathematical Sciences A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications. Published version 2015-09-25T06:01:24Z 2019-12-06T21:10:41Z 2015-09-25T06:01:24Z 2019-12-06T21:10:41Z 2015 2015 Journal Article Yang, Z., Wang, M., Shukla, S., Zhu, Y., Deng, J., Ge, H., et al. (2015). Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application. Scientific Reports, 5, 11377-. 2045-2322 https://hdl.handle.net/10356/103352 http://hdl.handle.net/10220/38748 10.1038/srep11377 26077658 en Scientific Reports This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
description A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Shukla, Sudhanshu
Yang, Zhi
Wang, Minqiang
Zhu, Yue
Deng, Jianping
Ge, Hu
Wang, Xingzhi
Xiong, Qihua
format Article
author Shukla, Sudhanshu
Yang, Zhi
Wang, Minqiang
Zhu, Yue
Deng, Jianping
Ge, Hu
Wang, Xingzhi
Xiong, Qihua
spellingShingle Shukla, Sudhanshu
Yang, Zhi
Wang, Minqiang
Zhu, Yue
Deng, Jianping
Ge, Hu
Wang, Xingzhi
Xiong, Qihua
Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application
author_sort Shukla, Sudhanshu
title Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application
title_short Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application
title_full Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application
title_fullStr Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application
title_full_unstemmed Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application
title_sort developing seedless growth of zno micro/nanowire arrays towards zno/fes2/cui p-i-n photodiode application
publishDate 2015
url https://hdl.handle.net/10356/103352
http://hdl.handle.net/10220/38748
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