Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices

• المؤلفون الرئيسيون: Loy, Desmond Jia Jun, Dananjaya, Putu Andhita, Hong, Xiao Liang, Shum, D. P., Lew, Wensiang
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Conduction Mechanisms; Schottky Emission; DRNTU::Science::Chemistry
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/103404; http://hdl.handle.net/10220/47306
• المؤسسة: Nanyang Technological University

We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures an...