Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices
We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures an...
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sg-ntu-dr.10356-1034042023-02-28T19:44:01Z Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices Loy, Desmond Jia Jun Dananjaya, Putu Andhita Hong, Xiao Liang Shum, D. P. Lew, Wensiang School of Physical and Mathematical Sciences Conduction Mechanisms Schottky Emission DRNTU::Science::Chemistry We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 102. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width. Published version 2019-01-02T06:29:06Z 2019-12-06T21:11:55Z 2019-01-02T06:29:06Z 2019-12-06T21:11:55Z 2018 Journal Article Loy, D. J. J., Dananjaya, P. A., Hong, X. L., Shum, D. P., & Lew, W. S. (2018). Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices. Scientific Reports, 8(1), 14774-. doi:10.1038/s41598-018-33198-0 https://hdl.handle.net/10356/103404 http://hdl.handle.net/10220/47306 10.1038/s41598-018-33198-0 en Scientific Reports © 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. 9 p. application/pdf |
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Conduction Mechanisms Schottky Emission DRNTU::Science::Chemistry Loy, Desmond Jia Jun Dananjaya, Putu Andhita Hong, Xiao Liang Shum, D. P. Lew, Wensiang Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices |
| description |
We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 102. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width. |
| author2 |
School of Physical and Mathematical Sciences |
| author_facet |
School of Physical and Mathematical Sciences Loy, Desmond Jia Jun Dananjaya, Putu Andhita Hong, Xiao Liang Shum, D. P. Lew, Wensiang |
| format |
Article |
| author |
Loy, Desmond Jia Jun Dananjaya, Putu Andhita Hong, Xiao Liang Shum, D. P. Lew, Wensiang |
| author_sort |
Loy, Desmond Jia Jun |
| title |
Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices |
| title_short |
Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices |
| title_full |
Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices |
| title_fullStr |
Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices |
| title_full_unstemmed |
Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices |
| title_sort |
conduction mechanisms on high retention annealed mgo-based resistive switching memory devices |
| publishDate |
2019 |
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https://hdl.handle.net/10356/103404 http://hdl.handle.net/10220/47306 |
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1759853168891527168 |