Rectifying resistive memory devices as dynamic complementary artificial synapses

• Main Author: Berco, Dan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Brain Inspired Computing; Artificial Neural Networks; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/103559; http://hdl.handle.net/10220/47332
• Institution: Nanyang Technological University

Brain inspired computing is a pioneering computational method gaining momentum in recent years. Within this scheme, artificial neural networks are implemented using two main approaches: software algorithms and designated hardware architectures. However, while software implementations show remarkable results (at high-energy costs), hardware based ones, specifically resistive random access memory (RRAM) arrays that consume little power and hold a potential for enormous densities, are somewhat lagging. One of the reasons may be related to the limited excitatory operation mode of RRAMs in these arrays as adjustable passive elements. An interesting type of RRAM was demonstrated recently for having alternating dynamic switching current rectification properties that may be used for complementary operation much like CMOS transistors. Such artificial synaptic devices may be switched dynamically between excitatory and inhibitory modes to allow doubling of the array density and significantly reducing the peripheral circuit complexity.