Design of ultra-low phase noise and high power integrated oscillator in 0.25µm GaN-on-SiC HEMT technology

• Main Authors: Liu, Hang, Zhu, Xi, Boon, Chirn Chye, Yi, Xiang, Mao, Mengda, Yang, Wanlan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/103642; http://hdl.handle.net/10220/19347
• Institution: Nanyang Technological University

A novel ultra-low phase noise and high power integrated oscillator is presented in this letter. The proposed oscillator, based on GaN-on-SiC high electron mobility transistor (HEMT) with 0.25 μm gate length and 800 μm gate width, delivers 21 dBm output power when biased at VGS=-3 V and VDD = 28 V. P...