Deep elastic strain engineering of bandgap through machine learning
Nanoscale specimens of semiconductor materials as diverse as silicon and diamond are now known to be deformable to large elastic strains without inelastic relaxation. These discoveries harbinger a new age of deep elastic strain engineering of the band structure and device performance of electronic m...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2019
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/103730 http://hdl.handle.net/10220/49987 |
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Institution: | Nanyang Technological University |
Language: | English |
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