Deep elastic strain engineering of bandgap through machine learning

• المؤلفون الرئيسيون: Shi, Zhe, Tsymbalov, Evgenii, Dao, Ming, Suresh, Subra, Shapeev, Alexander, Li, Ju
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Electronic Band Structure; Bandgap Engineering; Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/103730; http://hdl.handle.net/10220/49987
• المؤسسة: Nanyang Technological University

Nanoscale specimens of semiconductor materials as diverse as silicon and diamond are now known to be deformable to large elastic strains without inelastic relaxation. These discoveries harbinger a new age of deep elastic strain engineering of the band structure and device performance of electronic m...