Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper

Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective co...

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Main Authors: Tay, Roland Yingjie, Griep, Mark H., Mallick, Govind, Tsang, Siu Hon, Singh, Ram Sevak, Tumlin, Travis, Teo, Edwin Hang Tong, Karna, Shashi P.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
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Online Access:https://hdl.handle.net/10356/103803
http://hdl.handle.net/10220/19318
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1038032020-09-26T22:18:06Z Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper Tay, Roland Yingjie Griep, Mark H. Mallick, Govind Tsang, Siu Hon Singh, Ram Sevak Tumlin, Travis Teo, Edwin Hang Tong Karna, Shashi P. School of Electrical and Electronic Engineering School of Materials Science & Engineering Temasek Laboratories DRNTU::Engineering::Materials::Nanostructured materials DRNTU::Engineering::Electrical and electronic engineering Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene-based applications. The development of h-BN films using chemical vapor deposition (CVD) has thus far led into nucleation of triangular or asymmetric diamond shapes on different metallic surfaces. Additionally, the average size of the triangular domains has remained relatively small (∼0.5 μm2) leading to a large number of grain boundaries and defects. While the morphology of Cu surfaces for CVD-grown graphene may have impacts on the nucleation density, domain sizes, thickness, and uniformity, the effects of the decreased roughness of Cu surface to develop h-BN films are unknown. Here, we report the growth and characterization of novel large area h-BN hexagons using highly electropolished Cu substrate under atmospheric pressure CVD conditions. We found that the nucleation density of h-BN is significantly reduced while domain sizes increase. In this study, the largest hexagonal-shape h-BN domain observed is 35 μm2, which is an order of magnitude larger than a typical triangular domain. As the domains coalesce to form a continuous film, the larger grain size offers a more pristine and smoother film with lesser grain boundaries induced defects Accepted version 2014-05-12T02:27:44Z 2019-12-06T21:20:37Z 2014-05-12T02:27:44Z 2019-12-06T21:20:37Z 2014 2014 Journal Article Tay, R. Y., Griep, M. H., Mallick, G., Tsang, S. H., Singh, R. S., Tumlin, T., Teo, E. H. T., & Karna, S. P. (2014). Growth of Large Single-Crystalline Two-Dimensional Boron Nitride Hexagons on Electropolished Copper. Nano Letters, 14(2), 839-846. 1530-6984 https://hdl.handle.net/10356/103803 http://hdl.handle.net/10220/19318 10.1021/nl404207f en Nano Letters © 2014 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Letters, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/nl404207f]. 21 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Nanostructured materials
DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Materials::Nanostructured materials
DRNTU::Engineering::Electrical and electronic engineering
Tay, Roland Yingjie
Griep, Mark H.
Mallick, Govind
Tsang, Siu Hon
Singh, Ram Sevak
Tumlin, Travis
Teo, Edwin Hang Tong
Karna, Shashi P.
Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
description Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene-based applications. The development of h-BN films using chemical vapor deposition (CVD) has thus far led into nucleation of triangular or asymmetric diamond shapes on different metallic surfaces. Additionally, the average size of the triangular domains has remained relatively small (∼0.5 μm2) leading to a large number of grain boundaries and defects. While the morphology of Cu surfaces for CVD-grown graphene may have impacts on the nucleation density, domain sizes, thickness, and uniformity, the effects of the decreased roughness of Cu surface to develop h-BN films are unknown. Here, we report the growth and characterization of novel large area h-BN hexagons using highly electropolished Cu substrate under atmospheric pressure CVD conditions. We found that the nucleation density of h-BN is significantly reduced while domain sizes increase. In this study, the largest hexagonal-shape h-BN domain observed is 35 μm2, which is an order of magnitude larger than a typical triangular domain. As the domains coalesce to form a continuous film, the larger grain size offers a more pristine and smoother film with lesser grain boundaries induced defects
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tay, Roland Yingjie
Griep, Mark H.
Mallick, Govind
Tsang, Siu Hon
Singh, Ram Sevak
Tumlin, Travis
Teo, Edwin Hang Tong
Karna, Shashi P.
format Article
author Tay, Roland Yingjie
Griep, Mark H.
Mallick, Govind
Tsang, Siu Hon
Singh, Ram Sevak
Tumlin, Travis
Teo, Edwin Hang Tong
Karna, Shashi P.
author_sort Tay, Roland Yingjie
title Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
title_short Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
title_full Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
title_fullStr Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
title_full_unstemmed Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
title_sort growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
publishDate 2014
url https://hdl.handle.net/10356/103803
http://hdl.handle.net/10220/19318
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