A miniaturized millimeter-wave standing-wave filtering switch with high P1dB

This paper presents the design considerations of a silicon-based transmit/receive (T/R) switch for microwave and millimeter-wave frequencies. Techniques for minimizing switch size and loss while increasing linearity are discussed. With the dedicated idea of the standing-wave concept, a combo design...

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Main Authors: Ma, Kaixue, Mou, Shouxian, Yeo, Kiat Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/103831
http://hdl.handle.net/10220/16975
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1038312020-03-07T14:02:44Z A miniaturized millimeter-wave standing-wave filtering switch with high P1dB Ma, Kaixue Mou, Shouxian Yeo, Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems This paper presents the design considerations of a silicon-based transmit/receive (T/R) switch for microwave and millimeter-wave frequencies. Techniques for minimizing switch size and loss while increasing linearity are discussed. With the dedicated idea of the standing-wave concept, a combo design of a bandpass filter and switch, called the filtering switch, is introduced for the front-end system to achieve better performance in terms of low insertion loss, compact size, and good linearity simultaneously. Based on the proposed switchable artificial resonator, a standing-wave single-pole single-throw (SPST) and a single-pole double-throw (SPDT) filtering switches are designed and implemented for demonstration. Fabricated with a 0.18- μm SiGe BiCMOS process, the standing-wave SPST exhibits only 1.9-dB insertion loss and 18-dB isolation with a compact chip area of only 0.027 mm2 at 50 GHz. The SPDT T/R switch exhibits 3.2-dB insertion loss, good stopband rejection, and 20-dB isolation with only 0.0675 mm2 active chip area at 60 GHz. With the proposed standing-wave topology, a good linearity with the input 1-dB compression point (P1dB) of 21 dBm is obtained for both switches. 2013-10-28T06:25:01Z 2019-12-06T21:21:14Z 2013-10-28T06:25:01Z 2019-12-06T21:21:14Z 2013 2013 Journal Article Ma, K., Mou, S., & Yeo, K. S. (2013).A miniaturized millimeter-wave standing-wave filtering switch with high P1dB. IEEE transactions on microwave theory and techniques, 61(4), 1505-1515. 0018-9480 https://hdl.handle.net/10356/103831 http://hdl.handle.net/10220/16975 10.1109/TMTT.2013.2250994 en IEEE transactions on microwave theory and techniques
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems
Ma, Kaixue
Mou, Shouxian
Yeo, Kiat Seng
A miniaturized millimeter-wave standing-wave filtering switch with high P1dB
description This paper presents the design considerations of a silicon-based transmit/receive (T/R) switch for microwave and millimeter-wave frequencies. Techniques for minimizing switch size and loss while increasing linearity are discussed. With the dedicated idea of the standing-wave concept, a combo design of a bandpass filter and switch, called the filtering switch, is introduced for the front-end system to achieve better performance in terms of low insertion loss, compact size, and good linearity simultaneously. Based on the proposed switchable artificial resonator, a standing-wave single-pole single-throw (SPST) and a single-pole double-throw (SPDT) filtering switches are designed and implemented for demonstration. Fabricated with a 0.18- μm SiGe BiCMOS process, the standing-wave SPST exhibits only 1.9-dB insertion loss and 18-dB isolation with a compact chip area of only 0.027 mm2 at 50 GHz. The SPDT T/R switch exhibits 3.2-dB insertion loss, good stopband rejection, and 20-dB isolation with only 0.0675 mm2 active chip area at 60 GHz. With the proposed standing-wave topology, a good linearity with the input 1-dB compression point (P1dB) of 21 dBm is obtained for both switches.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ma, Kaixue
Mou, Shouxian
Yeo, Kiat Seng
format Article
author Ma, Kaixue
Mou, Shouxian
Yeo, Kiat Seng
author_sort Ma, Kaixue
title A miniaturized millimeter-wave standing-wave filtering switch with high P1dB
title_short A miniaturized millimeter-wave standing-wave filtering switch with high P1dB
title_full A miniaturized millimeter-wave standing-wave filtering switch with high P1dB
title_fullStr A miniaturized millimeter-wave standing-wave filtering switch with high P1dB
title_full_unstemmed A miniaturized millimeter-wave standing-wave filtering switch with high P1dB
title_sort miniaturized millimeter-wave standing-wave filtering switch with high p1db
publishDate 2013
url https://hdl.handle.net/10356/103831
http://hdl.handle.net/10220/16975
_version_ 1681049871126102016