Review of nanostructured resistive switching memristor and its applications

• Main Authors: Hu, S. G., Wu, S. Y., Jia, W. W., Yu, Q., Deng, L. J., Fu, Y. Q., Liu, Y., Chen, T. P.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/103951; http://hdl.handle.net/10220/24651
• Institution: Nanyang Technological University

Resistive switching memristor, predicted as the fourth fundamental passive circuit element (in addition to resistor, capacitor, and inductor) in the world by Leon Chua in 1971 and demonstrated by Hewlett Packard laboratory in 2008, has attracted extensive research attention for its high scalability and versatility. In this paper, we reviewed the working mechanisms and mathematical models of nanostructured resistive switching memristors, and examined various emerging applications of the memristors, including memory, analog, logic and neuromorphic applications.