Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study

• Main Authors: Shubhakar, Kalya, Pey, Kin Leong, Kouda, Miyuki, Kakushima, Kuniyuki, Iwai, Hiroshi, Bosman, Michel, Kushvaha, Sunil Singh, O'Shea, Sean Joseph
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/104193; http://hdl.handle.net/10220/19769
• Institution: Nanyang Technological University

Grain boundaries in the polycrystalline microstructure of post-annealed high-κ (HK) dielectrics are a major limitation in the reliability of HK dielectrics used for advanced CMOS technologies. Another challenge in the field of HK dielectrics is to ensure higher drain drive current in CMOS, while mai...