Examination of electronic structure differences between CIGSSe and CZTSSe by photoluminescence study

• Main Authors: Tai, Kong Fai, Gershon, Talia, Gunawan, Oki, Huan, Cheng Hon Alfred
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2015
• Subjects: Photons; Thin film devices; Blue shift; Photoluminescence; Band gap
• Online Access: https://hdl.handle.net/10356/104250; http://hdl.handle.net/10220/38808
• Institution: Nanyang Technological University

In this paper, we elaborate on the interpretation and use of photoluminescence (PL) measurements as they relate to the “donor/acceptor” and “electrostatic potential fluctuations” models for compensated semiconductors. Low-temperature (7 K) PL measurements were performed on high-efficiency Cu(In,Ga)(...