InP based quantum dots for long wavelength emissions and their post-growth bandgap tuning

• المؤلفون الرئيسيون: Tang, Xiaohong, Yin, Zongyou
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/104836; http://hdl.handle.net/10220/25993

InP based III–V compound semiconductor quantum dot (QD) structures emitting at mid-infrared range were grown by using metal-organic chemical vapor deposition (MOCVD). A two-step growth of QDs method was used to grow the QDs to improve the QDs' shape, dot density and the dot size uniformity. Emi...