InP based quantum dots for long wavelength emissions and their post-growth bandgap tuning

InP based III–V compound semiconductor quantum dot (QD) structures emitting at mid-infrared range were grown by using metal-organic chemical vapor deposition (MOCVD). A two-step growth of QDs method was used to grow the QDs to improve the QDs' shape, dot density and the dot size uniformity. Emi...

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Bibliographic Details
Main Authors: Tang, Xiaohong, Yin, Zongyou
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Subjects:
Online Access:https://hdl.handle.net/10356/104836
http://hdl.handle.net/10220/25993
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Institution: Nanyang Technological University
Language: English