Semiconductor cavity QED : band gap induced by vacuum fluctuations

• Main Authors: Espinosa-Ortega, T., Kyriienko, O., Kibis, O. V., Shelykh, I. A.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/104878; http://hdl.handle.net/10220/20282
• Institution: Nanyang Technological University

We consider theoretically a semiconductor nanostructure embedded in one-dimensional microcavity and study the modification of its electron energy spectrum by the vacuum fluctuations of the electromagnetic field. To solve the problem, a nonperturbative diagrammatic approach based on the Green's function formalism is developed. It is shown that the interaction of the system with the vacuum fluctuations of the optical cavity opens gaps within the valence band of the semiconductor. The approach is verified for the case of large photon occupation numbers, proving the validity of the model by comparing to previous studies of the semiconductor system excited by a classical electromagnetic field. The developed theory is of general character and allows for unification of quantum and classical descriptions of the strong light-matter interaction in semiconductor structures.