Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene

• المؤلفون الرئيسيون: Zhang, Xi, Wang, Chao, Diao, Dongfeng, Sun, Chang Qing
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/104885; http://hdl.handle.net/10220/20367; http://dx.doi.org/10.1063/1.4891558

In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanor...