Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode

• Main Authors: Iwan, S., Bambang, S., Zhao, J. L., Sun, L., Zhang, S., Ryu, H. H., Tan, Swee Tiam, Fan, Hai Ming, Sun, Xiaowei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/105298; http://hdl.handle.net/10220/17751; http://dx.doi.org/10.1016/j.physb.2012.03.072
• Institution: Nanyang Technological University

Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films.