A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS

A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS

A 96-GHz CMOS oscillator is demonstrated in this brief with the use of a high-Q metamaterial resonator. The proposed metamaterial resonator is constructed by a differential transmission line (T-line) loaded with complementary split-ring resonator engraved on the T-line. A negative real part of permi...

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Main Authors: Fei, Wei, Yu, Hao, Shang, Yang, Cai, Deyun, Ren, Junyan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/105358
http://hdl.handle.net/10220/16597
http://dx.doi.org/10.1109/TCSII.2013.2240813
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1053582019-12-06T21:49:53Z A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS Fei, Wei Yu, Hao Shang, Yang Cai, Deyun Ren, Junyan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A 96-GHz CMOS oscillator is demonstrated in this brief with the use of a high-Q metamaterial resonator. The proposed metamaterial resonator is constructed by a differential transmission line (T-line) loaded with complementary split-ring resonator engraved on the T-line. A negative real part of permittivity, i.e., , is observed near the resonance frequency, which introduces a sharp stopband and, thus, leads to a high-Q resonance. This brief is the first in literature to explore CMOS on-chip metamaterial resonator for oscillator design at the millimeter-wave frequency region. Compared with the existing oscillators with a LC-tank-based resonator at around 100 GHz, the proposed 96-GHz oscillator with high- metamaterial resonator shows much lower phase noise of 111.5 dBc/Hz at 10-MHz offset and figure-of-merit of 182.4 dBc/Hz. Accepted version 2013-10-18T03:38:27Z 2019-12-06T21:49:52Z 2013-10-18T03:38:27Z 2019-12-06T21:49:52Z 2013 2013 Journal Article Fei, W., Yu, H., Shang, Y., Cai, D., & Ren, J. (2013). A 96-GHz Oscillator by High- Q Differential Transmission Line loaded with Complementary Split-Ring Resonator in 65-nm CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs, 60(3), 127-131. 1549-7747 https://hdl.handle.net/10356/105358 http://hdl.handle.net/10220/16597 http://dx.doi.org/10.1109/TCSII.2013.2240813 en IEEE transactions on circuits and systems II : express briefs © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TCSII.2013.2240813]. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Fei, Wei
Yu, Hao
Shang, Yang
Cai, Deyun
Ren, Junyan
A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS
description A 96-GHz CMOS oscillator is demonstrated in this brief with the use of a high-Q metamaterial resonator. The proposed metamaterial resonator is constructed by a differential transmission line (T-line) loaded with complementary split-ring resonator engraved on the T-line. A negative real part of permittivity, i.e., , is observed near the resonance frequency, which introduces a sharp stopband and, thus, leads to a high-Q resonance. This brief is the first in literature to explore CMOS on-chip metamaterial resonator for oscillator design at the millimeter-wave frequency region. Compared with the existing oscillators with a LC-tank-based resonator at around 100 GHz, the proposed 96-GHz oscillator with high- metamaterial resonator shows much lower phase noise of 111.5 dBc/Hz at 10-MHz offset and figure-of-merit of 182.4 dBc/Hz.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Fei, Wei
Yu, Hao
Shang, Yang
Cai, Deyun
Ren, Junyan
format Article
author Fei, Wei
Yu, Hao
Shang, Yang
Cai, Deyun
Ren, Junyan
author_sort Fei, Wei
title A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS
title_short A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS
title_full A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS
title_fullStr A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS
title_full_unstemmed A 96-GHz oscillator by high- Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS
title_sort 96-ghz oscillator by high- q differential transmission line loaded with complementary split-ring resonator in 65-nm cmos
publishDate 2013
url https://hdl.handle.net/10356/105358
http://hdl.handle.net/10220/16597
http://dx.doi.org/10.1109/TCSII.2013.2240813
_version_ 1681038691206692864

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