A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications

This paper describes a low-power 25-kS/s successive approximation register (SAR) analog-to-digital converter (ADC) for biomedical applications. The ADC employs a novel low-energy and area-efficient tri-level switching scheme in the DAC. Compared to the conventional SAR ADC, the average switching ene...

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Main Authors: Yuan, Chao, Lam, Yvonne Ying Hung
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/105386
http://hdl.handle.net/10220/16582
http://dx.doi.org/10.1109/ISCAS.2013.6571919
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1053862019-12-06T21:50:26Z A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications Yuan, Chao Lam, Yvonne Ying Hung School of Electrical and Electronic Engineering IEEE International Symposium on Circuits and Systems (2013 : Beijing, China) DRNTU::Engineering::Electrical and electronic engineering This paper describes a low-power 25-kS/s successive approximation register (SAR) analog-to-digital converter (ADC) for biomedical applications. The ADC employs a novel low-energy and area-efficient tri-level switching scheme in the DAC. Compared to the conventional SAR ADC, the average switching energy and total capacitance are reduced by 97% and 75%, respectively. Asynchronous design is implemented to eliminate the conventional system clock which is N-time of sampling rate. Furthermore, a delay-based internal clock generator produces a high-speed signal which allows True Single Phase Clock (TSPC) D Flip-flop (DFF) to be used in the low-speed biomedical applications. The ADC can work between 0 to 1 MS/s. The prototype ADC fabricated in UMC 65 nm 1P6M CMOS achieves best performance at 25 kS/s with 50.1 dB SNDR and 55.3 dB SFDR. Operating at 1 V supply and 25 kS/s, the ADC consumes 281 nW and exhibits a FOM of 43.3 fJ/conversion-step. The chip die area is 145 μm × 120 μm. 2013-10-18T02:46:46Z 2019-12-06T21:50:26Z 2013-10-18T02:46:46Z 2019-12-06T21:50:26Z 2013 2013 Conference Paper Yuan, C., & Lam, Y. Y. H. (2013). A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications. 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 622-625. https://hdl.handle.net/10356/105386 http://hdl.handle.net/10220/16582 http://dx.doi.org/10.1109/ISCAS.2013.6571919 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Yuan, Chao
Lam, Yvonne Ying Hung
A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
description This paper describes a low-power 25-kS/s successive approximation register (SAR) analog-to-digital converter (ADC) for biomedical applications. The ADC employs a novel low-energy and area-efficient tri-level switching scheme in the DAC. Compared to the conventional SAR ADC, the average switching energy and total capacitance are reduced by 97% and 75%, respectively. Asynchronous design is implemented to eliminate the conventional system clock which is N-time of sampling rate. Furthermore, a delay-based internal clock generator produces a high-speed signal which allows True Single Phase Clock (TSPC) D Flip-flop (DFF) to be used in the low-speed biomedical applications. The ADC can work between 0 to 1 MS/s. The prototype ADC fabricated in UMC 65 nm 1P6M CMOS achieves best performance at 25 kS/s with 50.1 dB SNDR and 55.3 dB SFDR. Operating at 1 V supply and 25 kS/s, the ADC consumes 281 nW and exhibits a FOM of 43.3 fJ/conversion-step. The chip die area is 145 μm × 120 μm.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yuan, Chao
Lam, Yvonne Ying Hung
format Conference or Workshop Item
author Yuan, Chao
Lam, Yvonne Ying Hung
author_sort Yuan, Chao
title A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
title_short A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
title_full A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
title_fullStr A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
title_full_unstemmed A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
title_sort 281-nw 43.3 fj/conversion-step 8-enob 25-ks/s asynchronous sar adc in 65nm cmos for biomedical applications
publishDate 2013
url https://hdl.handle.net/10356/105386
http://hdl.handle.net/10220/16582
http://dx.doi.org/10.1109/ISCAS.2013.6571919
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