A 76 GHz oscillator by high-Q differential transmission line loaded with split ring resonator in 65-nm CMOS
A power and area efficient CMOS oscillator by high-Q metamaterial resonator is introduced in this paper for phase noise improvement. The resonator is based on the differential transmission-line (T-line) loaded with split ring resonator (SRR), which can enhance the EM energy coupling and further impr...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105526 http://hdl.handle.net/10220/16606 http://dx.doi.org/10.1109/SiRF.2013.6489449 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | A power and area efficient CMOS oscillator by high-Q metamaterial resonator is introduced in this paper for phase noise improvement. The resonator is based on the differential transmission-line (T-line) loaded with split ring resonator (SRR), which can enhance the EM energy coupling and further improve the Q. The proposed oscillator is implemented in 65-nm CMOS process, which consumes 2.7 mA and occupies a compact core area of 480 μm × 320 μm. At the oscillation frequency (76 GHz), the measured phase noise is -108.8 dBc/Hz at 10 MHz offset and the figure-of-merit (FOM) is -182.1 dBc/Hz, which is 4 dB better than that of the standing-wave oscillator implemented on the same chip. |
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