Implementation of a low noise amplifier with self-recovery capability

• Main Authors: Liu, Yanchen, Zhang, Caizhi, Chen, Tupei, Kong, Deyu, Guo, Rui, Wang, J. J., Wu, Yuancong, Hu, S. G., Rong, L. M., Yu, Qi, Liu, Yang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: LNA; HCI; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/106309; http://hdl.handle.net/10220/48956; http://dx.doi.org/10.1109/ACCESS.2019.2907524
• Institution: Nanyang Technological University

In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13μm CMOS technology and the self-recovery capability has been experimentally demonstrated.