Optical and electrical properties of two-dimensional palladium diselenide

Two-dimensional (2D) noble-metal dichalcogenides exhibit exceptionally strong thickness-dependent bandgaps, which can be leveraged in a wide variety of device applications. A detailed study of their optical (e.g., optical bandgaps) and electrical properties (e.g., mobilities) is important in determi...

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Main Authors: Zhang, George, Amani, Matin, Chaturvedi, Apoorva, Tan, Chaoliang, Bullock, James, Song, Xiaohui, Kim, Hyungjin, Lien, Der-Hsien, Scott, Mary C., Zhang, Hua, Javey, Ali
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2019
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Online Access:https://hdl.handle.net/10356/106404
http://hdl.handle.net/10220/49628
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1064042023-07-14T15:46:19Z Optical and electrical properties of two-dimensional palladium diselenide Zhang, George Amani, Matin Chaturvedi, Apoorva Tan, Chaoliang Bullock, James Song, Xiaohui Kim, Hyungjin Lien, Der-Hsien Scott, Mary C. Zhang, Hua Javey, Ali School of Materials Science & Engineering Engineering::Materials Optical Absorption Band Gap Two-dimensional (2D) noble-metal dichalcogenides exhibit exceptionally strong thickness-dependent bandgaps, which can be leveraged in a wide variety of device applications. A detailed study of their optical (e.g., optical bandgaps) and electrical properties (e.g., mobilities) is important in determining potential future applications of these materials. In this work, we perform detailed optical and electrical characterization of 2D PdSe2 nanoflakes mechanically exfoliated from a single-crystalline source. Layer-dependent bandgap analysis from optical absorption results indicates that this material is an indirect semiconductor with bandgaps of approximately 1.37 and 0.50 eV for the monolayer and bulk, respectively. Spectral photoresponse measurements further confirm these bandgap values. Moreover, temperature-dependent electrical measurements of a 6.8-nm-thick PdSe2 flake-based transistor show effective electron mobilities of 130 and 520 cm2 V−1 s−1 at 300 K and 77 K, respectively. Finally, we demonstrate that PdSe2 can be utilized for short-wave infrared photodetectors. A room-temperature specific detectivity (D*) of 1.8 × 1010 cm Hz1/2 W−1 at 1 μm with a band edge at 1.94 μm is achieved on a 6.8-nm-thick PdSe2 flake-based photodetector. Published version 2019-08-14T06:46:24Z 2019-12-06T22:10:56Z 2019-08-14T06:46:24Z 2019-12-06T22:10:56Z 2019 Journal Article Zhang, G., Amani, M., Chaturvedi, A., Tan, C., Bullock, J., Song, X., . . . Javey, A. (2019). Optical and electrical properties of two-dimensional palladium diselenide. Applied Physics Letters, 114(25), 253102-. doi:10.1063/1.5097825 0003-6951 https://hdl.handle.net/10356/106404 http://hdl.handle.net/10220/49628 10.1063/1.5097825 en Applied Physics Letters © 2019 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s). 5 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Optical Absorption
Band Gap
spellingShingle Engineering::Materials
Optical Absorption
Band Gap
Zhang, George
Amani, Matin
Chaturvedi, Apoorva
Tan, Chaoliang
Bullock, James
Song, Xiaohui
Kim, Hyungjin
Lien, Der-Hsien
Scott, Mary C.
Zhang, Hua
Javey, Ali
Optical and electrical properties of two-dimensional palladium diselenide
description Two-dimensional (2D) noble-metal dichalcogenides exhibit exceptionally strong thickness-dependent bandgaps, which can be leveraged in a wide variety of device applications. A detailed study of their optical (e.g., optical bandgaps) and electrical properties (e.g., mobilities) is important in determining potential future applications of these materials. In this work, we perform detailed optical and electrical characterization of 2D PdSe2 nanoflakes mechanically exfoliated from a single-crystalline source. Layer-dependent bandgap analysis from optical absorption results indicates that this material is an indirect semiconductor with bandgaps of approximately 1.37 and 0.50 eV for the monolayer and bulk, respectively. Spectral photoresponse measurements further confirm these bandgap values. Moreover, temperature-dependent electrical measurements of a 6.8-nm-thick PdSe2 flake-based transistor show effective electron mobilities of 130 and 520 cm2 V−1 s−1 at 300 K and 77 K, respectively. Finally, we demonstrate that PdSe2 can be utilized for short-wave infrared photodetectors. A room-temperature specific detectivity (D*) of 1.8 × 1010 cm Hz1/2 W−1 at 1 μm with a band edge at 1.94 μm is achieved on a 6.8-nm-thick PdSe2 flake-based photodetector.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Zhang, George
Amani, Matin
Chaturvedi, Apoorva
Tan, Chaoliang
Bullock, James
Song, Xiaohui
Kim, Hyungjin
Lien, Der-Hsien
Scott, Mary C.
Zhang, Hua
Javey, Ali
format Article
author Zhang, George
Amani, Matin
Chaturvedi, Apoorva
Tan, Chaoliang
Bullock, James
Song, Xiaohui
Kim, Hyungjin
Lien, Der-Hsien
Scott, Mary C.
Zhang, Hua
Javey, Ali
author_sort Zhang, George
title Optical and electrical properties of two-dimensional palladium diselenide
title_short Optical and electrical properties of two-dimensional palladium diselenide
title_full Optical and electrical properties of two-dimensional palladium diselenide
title_fullStr Optical and electrical properties of two-dimensional palladium diselenide
title_full_unstemmed Optical and electrical properties of two-dimensional palladium diselenide
title_sort optical and electrical properties of two-dimensional palladium diselenide
publishDate 2019
url https://hdl.handle.net/10356/106404
http://hdl.handle.net/10220/49628
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