High velocity domain wall propagation using voltage controlled magnetic anisotropy

• Main Authors: Tan, Fu Nan, Gan, Wei Liang, Ang, Calvin Ching Ian, Liu, H. X., Poh, F., Lew, Wen Siang, Wong, G. D. H.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2019
• Subjects: Electronic Devices; Magnetic Devices; DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/106583; http://hdl.handle.net/10220/48955
• Institution: Nanyang Technological University

The use of voltage-controlled magnetic anisotropy (VCMA) via the creation of a sloped electric field has been hailed as an energy-efficient approach for domain wall (DW) propagation. However, this method suffers from a limitation of the nanowire length which the DW can propagate on. Here, we propose the use of multiplexed gate electrodes to propagate DWs on magnetic nanowires without having any length constraints. The multi-gate electrode configuration is demonstrated using micromagnetic simulations. This allows controllable voltages to be applied to neighboring gate electrodes, generating large strength of magnetic anisotropy gradients along the nanowire, and the results show that DW velocities higher than 300 m/s can be achieved. Analysis of the DW dynamics during propagation reveals that the tilt of the DW and the direction of slanted gate electrode greatly alters the steady state DW propagation. Our results show that chevron-shaped gate electrodes is an effective optimisation that leads to multi-DW propagation with high velocity. Moreover, a repeating series of high-medium-low magnetic anisotropy regions enables a deterministic VCMA-controlled high velocity DW propagation.