Revealing electronic nature of broad bound exciton bands in two-dimensional semiconducting WS2 and MoS2

• المؤلفون الرئيسيون: Shang, Jingzhi, Cong, Chunxiao, Shen, Xiaonan, Yang, Weihuang, Zou, Chenji, Peimyoo, Namphung, Cao, Bingchen, Eginligil, Mustafa, Lin, Wei, Huang, Wei, Yu, Ting
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Excitons; Electronic Structure; DRNTU::Science::Physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/106787; http://hdl.handle.net/10220/48980
• المؤسسة: Nanyang Technological University

Owing to unique electronic, excitonic, and valleytronic properties, atomically thin transition metal dichalcogenides are becoming a promising two-dimensional (2D) semiconductor system for diverse electronic and optoelectronic applications. In an ideal 2D semiconductor, efficient carrier transport is...