Switching domain wall motion on and off using a gate voltage for domain wall transistor applications
Spintronic devices such as magnetic random access memory and domain wall (DW) memory are attracting significant attention. Spin-field effect transistor devices have been proposed and researched for logic applications. In domain wall memory, the information is stored in magnetic domain states, which...
Saved in:
| Main Authors: | , , , |
|---|---|
| 格式: | Article |
| 語言: | English |
| 出版: |
2019
|
| 在線閱讀: | https://hdl.handle.net/10356/107016 http://hdl.handle.net/10220/49016 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |
| 語言: | English |