Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

• المؤلفون الرئيسيون: Sun, Juan, Nalla, Venkatram, Nguyen, Mai, Ren, Yi, Chiam, Sing Yang, Wang, Yue, Tai, Kong Fai, Sun, Handong, Zheludev, Nikolay, Batabyal, Sudip K., Wong, Lydia H.
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Materials::Energy materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/107202; http://hdl.handle.net/10220/25312
• المؤسسة: Nanyang Technological University

A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when...