Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

• Main Authors: Sun, Juan, Nalla, Venkatram, Nguyen, Mai, Ren, Yi, Chiam, Sing Yang, Wang, Yue, Tai, Kong Fai, Sun, Handong, Zheludev, Nikolay, Batabyal, Sudip K., Wong, Lydia H.
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Materials::Energy materials
• Online Access: https://hdl.handle.net/10356/107202; http://hdl.handle.net/10220/25312
• Institution: Nanyang Technological University

A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when...