Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

• Main Authors: Sun, Juan, Nalla, Venkatram, Nguyen, Mai, Ren, Yi, Chiam, Sing Yang, Wang, Yue, Tai, Kong Fai, Sun, Handong, Zheludev, Nikolay, Batabyal, Sudip K., Wong, Lydia H.
• 其他作者: School of Materials Science and Engineering
• 格式: Article
• 語言: English
• 出版: 2015
• 主題: DRNTU::Engineering::Materials::Energy materials
• 在線閱讀: https://hdl.handle.net/10356/107202; http://hdl.handle.net/10220/25312

A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when...