A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3

Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on per...

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Main Authors: Bera, Ashok, Peng, Haiyang, Lourembam, James, Shen, Youde, Sun, Xiaowei, Wu, T.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/107418
http://hdl.handle.net/10220/17582
http://dx.doi.org/10.1002/adfm.201300509
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1074182019-12-06T22:30:42Z A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3 Bera, Ashok Peng, Haiyang Lourembam, James Shen, Youde Sun, Xiaowei Wu, T. School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties. ASTAR (Agency for Sci., Tech. and Research, S’pore) 2013-11-11T05:58:31Z 2019-12-06T22:30:42Z 2013-11-11T05:58:31Z 2019-12-06T22:30:42Z 2013 2013 Journal Article Bera, A., Peng, H., Lourembam, J., Shen, Y., Sun, X., & Wu, T. (2013). A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3. Advanced functional materials, 23(39), 4977-4984. 1616-301X https://hdl.handle.net/10356/107418 http://hdl.handle.net/10220/17582 http://dx.doi.org/10.1002/adfm.201300509 en Advanced functional materials © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
institution Nanyang Technological University
building NTU Library
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language English
description Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Bera, Ashok
Peng, Haiyang
Lourembam, James
Shen, Youde
Sun, Xiaowei
Wu, T.
format Article
author Bera, Ashok
Peng, Haiyang
Lourembam, James
Shen, Youde
Sun, Xiaowei
Wu, T.
spellingShingle Bera, Ashok
Peng, Haiyang
Lourembam, James
Shen, Youde
Sun, Xiaowei
Wu, T.
A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3
author_sort Bera, Ashok
title A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3
title_short A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3
title_full A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3
title_fullStr A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3
title_full_unstemmed A versatile light-switchable nanorod memory : Wurtzite ZnO on perovskite SrTiO3
title_sort versatile light-switchable nanorod memory : wurtzite zno on perovskite srtio3
publishDate 2013
url https://hdl.handle.net/10356/107418
http://hdl.handle.net/10220/17582
http://dx.doi.org/10.1002/adfm.201300509
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