Sb2S3-based extremely thin absorber solar cell
Semiconductor-sensitised nanoporous solar cells are a derivative of dye-sensitised solar cells (DSSC) where a solid-state semiconductor absorber is used in place of the molecular dye of DSSC. In particular, solid-state cells have been drawing much attention recently due to its high light-harvesting...
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2013
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Online Access: | https://hdl.handle.net/10356/107544 http://hdl.handle.net/10220/9037 |
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sg-ntu-dr.10356-1075442020-09-27T20:30:41Z Sb2S3-based extremely thin absorber solar cell Kang, Aik Meng Subodh Gautam Mhaisalkar School of Materials Science & Engineering Semiconductor-sensitised nanoporous solar cells are a derivative of dye-sensitised solar cells (DSSC) where a solid-state semiconductor absorber is used in place of the molecular dye of DSSC. In particular, solid-state cells have been drawing much attention recently due to its high light-harvesting capability, tunable band gap over a wide range and a large intrinsic dipole moment. Such solid-state cells are fabricated where the semiconductor absorber is being sandwiched between interpenetrating electron and hole conductors. The typical thickness of the absorbers ranges from several nanometers to several tens of nanometers, also known as Extremely Thin Absorbers (ETA) cells. [4th Award] 2013-01-31T07:47:07Z 2019-12-06T22:33:38Z 2013-01-31T07:47:07Z 2019-12-06T22:33:38Z 2011 2011 Student Research Poster Kang, A. M. (2011, March). Sb2S3-based extremely thin absorber solar cell. Presented at Discover URECA @ NTU poster exhibition and competition, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/107544 http://hdl.handle.net/10220/9037 en © 2011 The Author(s). application/pdf |
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Semiconductor-sensitised nanoporous solar cells are a derivative of dye-sensitised solar cells (DSSC) where a solid-state semiconductor absorber is used in place of the molecular dye of DSSC. In particular, solid-state cells have been drawing much attention recently due to its high light-harvesting capability, tunable band gap over a wide range and a large intrinsic dipole moment. Such solid-state cells are fabricated where the semiconductor absorber is being sandwiched between interpenetrating electron and hole conductors. The typical thickness of the absorbers ranges from several nanometers to several tens of nanometers, also known as Extremely Thin Absorbers (ETA) cells. [4th Award] |
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Subodh Gautam Mhaisalkar |
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Subodh Gautam Mhaisalkar Kang, Aik Meng |
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Student Research Poster |
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Kang, Aik Meng |
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Kang, Aik Meng Sb2S3-based extremely thin absorber solar cell |
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Kang, Aik Meng |
title |
Sb2S3-based extremely thin absorber solar cell |
title_short |
Sb2S3-based extremely thin absorber solar cell |
title_full |
Sb2S3-based extremely thin absorber solar cell |
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Sb2S3-based extremely thin absorber solar cell |
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Sb2S3-based extremely thin absorber solar cell |
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sb2s3-based extremely thin absorber solar cell |
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2013 |
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https://hdl.handle.net/10356/107544 http://hdl.handle.net/10220/9037 |
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