Hodgkin–huxley artificial synaptic membrane based on protonic/electronic hybrid neuromorphic transistors

• Main Authors: Fu, Yang Ming, Wan, Chang Jin, Zhu, Li Qiang, Xiao, Hui, Chen, Xiao Dong, Wan, Qing
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Artificial Synaptic Membranes; Neuromorphic Transistors
• Online Access: https://hdl.handle.net/10356/137834
• Institution: Nanyang Technological University

Iontronics is a newly emerging interdisciplinary concept that bridges electronics and ionics. It provides new opportunities for biomimic information processing. Iontronic devices can act as building blocks for neuromorphic platforms. Here, a proof-of-principle Hodgkin–Huxley artificial synaptic membrane is proposed for the first time based on inorganic proton conductor. Phosphosilicate glass-based proton conductor electrolyte demonstrates unique short-term volatile charging behaviors, indicating potential short-term synaptic plasticity applications. By using protonic/electronic hybrid oxide transistor configuration, dynamic synaptic membrane potential responses are triggered with gate current spikes. Typical resting potential, excitatory/inhibitory postsynaptic potential behaviors, and membrane depolarization/activation behaviors are mimicked on the proposed Hodgkin–Huxley artificial synaptic membrane. Moreover, proton-related electrostatic coupling enables the device to possess short-term synaptic plasticities with low power consumption. The proposed Hodgkin–Huxley artificial synaptic membrane provides a new prototype for neuromorphic system applications.