High-transconductance stretchable transistors achieved by controlled gold microcrack morphology

High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of organic electrochemical transistors (OECTs). However...

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Main Authors: Matsuhisa, Naoji, Jiang, Ying, Liu, Zhiyuan, Chen, Geng, Wan, Changjin, Kim, Yeongin, Kang, Jiheong, Tran, Helen, Wu, Hung-Chin, You, Insang, Bao, Zhenan, Chen, Xiaodong
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/137859
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1378592023-07-14T15:56:30Z High-transconductance stretchable transistors achieved by controlled gold microcrack morphology Matsuhisa, Naoji Jiang, Ying Liu, Zhiyuan Chen, Geng Wan, Changjin Kim, Yeongin Kang, Jiheong Tran, Helen Wu, Hung-Chin You, Insang Bao, Zhenan Chen, Xiaodong School of Materials Science & Engineering Innovative Centre for Flexible Devices (iFLEX) Engineering::Materials Organic Electrochemical Transistors Stretchable Conductors High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of organic electrochemical transistors (OECTs). However, the stretchability of such systems has been tempered by the lack of stretchable conductors with high stability in electrolytes, high conductance at high strain (100%), and process compatibility with active layers. Highly stretchable and strain‐resistant Au conductors employed to fabricate intrinsically stretchable OECTs are demonstrated. Notably, the conductors exhibit a sheet resistance of 33.3 Ω Sq.−1 at 120% strain, the lowest reported value to date among stretchable Au thin film conductors. High‐performance stretchable Au is realized by suppressing strain‐induced microcrack propagation through control of the microcracks formed in deposited Au thin films. Then, the highly stretchable Au conductors are utilized to fabricate intrinsically stretchable OECTs with a high transconductance both at 0% strain (0.54 mS) and 140% strain (0.14 mS). Among previously reported systems, these OECTs show the highest transconductance at high strain (>50%). Finally, the high‐performance OECTs are utilized in stretchable synaptic transistors, which are critically important for the development of soft neuromorphic computing systems to provide artificial intelligence for future soft robotics. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-04-16T08:45:39Z 2020-04-16T08:45:39Z 2019 Journal Article Matsuhisa, N., Jiang, Y., Liu, Z., Chen, G., Wan, C., Kim, Y., . . . Chen, X. (2019). High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Advanced Electronic Materials, 5(8), 1900347-. doi:10.1002/aelm.201900347 2199-160X https://hdl.handle.net/10356/137859 10.1002/aelm.201900347 2-s2.0-85068529321 8 5 en Advanced Electronic Materials This is the peer reviewed version of the following article: Matsuhisa, N., Jiang, Y., Liu, Z., Chen, G., Wan, C., Kim, Y., . . . Chen, X. (2019). High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Advanced Electronic Materials, 5(8), 1900347-. doi:10.1002/aelm.201900347, which has been published in final form at https://doi.org/10.1002/aelm.201900347. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Organic Electrochemical Transistors
Stretchable Conductors
spellingShingle Engineering::Materials
Organic Electrochemical Transistors
Stretchable Conductors
Matsuhisa, Naoji
Jiang, Ying
Liu, Zhiyuan
Chen, Geng
Wan, Changjin
Kim, Yeongin
Kang, Jiheong
Tran, Helen
Wu, Hung-Chin
You, Insang
Bao, Zhenan
Chen, Xiaodong
High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
description High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of organic electrochemical transistors (OECTs). However, the stretchability of such systems has been tempered by the lack of stretchable conductors with high stability in electrolytes, high conductance at high strain (100%), and process compatibility with active layers. Highly stretchable and strain‐resistant Au conductors employed to fabricate intrinsically stretchable OECTs are demonstrated. Notably, the conductors exhibit a sheet resistance of 33.3 Ω Sq.−1 at 120% strain, the lowest reported value to date among stretchable Au thin film conductors. High‐performance stretchable Au is realized by suppressing strain‐induced microcrack propagation through control of the microcracks formed in deposited Au thin films. Then, the highly stretchable Au conductors are utilized to fabricate intrinsically stretchable OECTs with a high transconductance both at 0% strain (0.54 mS) and 140% strain (0.14 mS). Among previously reported systems, these OECTs show the highest transconductance at high strain (>50%). Finally, the high‐performance OECTs are utilized in stretchable synaptic transistors, which are critically important for the development of soft neuromorphic computing systems to provide artificial intelligence for future soft robotics.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Matsuhisa, Naoji
Jiang, Ying
Liu, Zhiyuan
Chen, Geng
Wan, Changjin
Kim, Yeongin
Kang, Jiheong
Tran, Helen
Wu, Hung-Chin
You, Insang
Bao, Zhenan
Chen, Xiaodong
format Article
author Matsuhisa, Naoji
Jiang, Ying
Liu, Zhiyuan
Chen, Geng
Wan, Changjin
Kim, Yeongin
Kang, Jiheong
Tran, Helen
Wu, Hung-Chin
You, Insang
Bao, Zhenan
Chen, Xiaodong
author_sort Matsuhisa, Naoji
title High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
title_short High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
title_full High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
title_fullStr High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
title_full_unstemmed High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
title_sort high-transconductance stretchable transistors achieved by controlled gold microcrack morphology
publishDate 2020
url https://hdl.handle.net/10356/137859
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