Solanki, A., Guerrero, A., Zhang, Q., Bisquert, J., Sum, T. C., & Sciences, S. o. P. a. M. (2020). Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories.
Chicago Style CitationSolanki, Ankur, Antonio Guerrero, Qiannan Zhang, Juan Bisquert, Tze Chien Sum, and School of Physical and Mathematical Sciences. Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories. 2020.
MLA引文Solanki, Ankur, et al. Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories. 2020.
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