Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories

Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories

Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/...

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Bibliographic Details
Main Authors: Solanki, Ankur, Guerrero, Antonio, Zhang, Qiannan, Bisquert, Juan, Sum, Tze Chien
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2020
Subjects:
Science::Physics
Perovskite
Hysteresis
Online Access:https://hdl.handle.net/10356/138045
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/138045

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