Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories

Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/...

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Main Authors: Solanki, Ankur, Guerrero, Antonio, Zhang, Qiannan, Bisquert, Juan, Sum, Tze Chien
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/138045
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spelling sg-ntu-dr.10356-1380452023-02-28T20:09:34Z Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories Solanki, Ankur Guerrero, Antonio Zhang, Qiannan Bisquert, Juan Sum, Tze Chien School of Physical and Mathematical Sciences Science::Physics Perovskite Hysteresis Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications. 2020-04-22T08:22:06Z 2020-04-22T08:22:06Z 2019 Journal Article Solanki, A., Guerrero, A., Zhang, Q., Bisquert, J., & Sum, T. C. (2020). Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories. Journal of Physical Chemistry Letters, 11(2), 463-470. doi:10.1021/acs.jpclett.9b03181 1948-7185 https://hdl.handle.net/10356/138045 10.1021/acs.jpclett.9b03181 31873017 2-s2.0-85077953092 2 11 463 470 en NTU Start-up Grant M4080514 JSPS-NTU Joint Research Project M4082176 MOE AcRF Tier 1 Grant RG173/16 MOE AcRF Tier 2 Grant MOE2015-T2-2-015 MOE AcRF Tier 2 Grant MOE2016-T2-1-034 MOE AcRF Tier 2 Grant MOE2017-T2-1-110 Singapore National Research Foundation NRF Investigatorship Programme NRF-NRFI-2018-04 Ministerio de Ciencia, Innovacioń y Universidades of Spain under Project MAT2016-76892-C3-1-R MICINN Ramoń y Cajal Fellowship (RYC201416809) University Jaume I (UJI-B2017-32) Journal of Physical Chemistry Letters 10.21979/N9/5DXP9O This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of Physical Chemistry Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpclett.9b03181 application/pdf application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics
Perovskite
Hysteresis
spellingShingle Science::Physics
Perovskite
Hysteresis
Solanki, Ankur
Guerrero, Antonio
Zhang, Qiannan
Bisquert, Juan
Sum, Tze Chien
Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories
description Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Solanki, Ankur
Guerrero, Antonio
Zhang, Qiannan
Bisquert, Juan
Sum, Tze Chien
format Article
author Solanki, Ankur
Guerrero, Antonio
Zhang, Qiannan
Bisquert, Juan
Sum, Tze Chien
author_sort Solanki, Ankur
title Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories
title_short Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories
title_full Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories
title_fullStr Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories
title_full_unstemmed Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories
title_sort interfacial mechanism for efficient resistive switching in ruddlesden-popper perovskites for non-volatile memories
publishDate 2020
url https://hdl.handle.net/10356/138045
_version_ 1759855869697196032