Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites

• Main Authors: Shan, Yingying, Lyu, Zhensheng, Guan, Xinwei, Younis, Adnan, Yuan, Guoliang, Wang, Junling, Li, Sean, Wu, Tom
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Switching System; Hybrid
• Online Access: https://hdl.handle.net/10356/138291
• Institution: Nanyang Technological University

Resistive random-access memory (ReRAM) is expected to be the next-generation non-volatile memory device because of its fast operation speed and low power consumption. Switching media in most ReMAM are oxides which are rigid and require high-temperature processing. Here, we review two emerging types...