Valley-Hall photonic topological insulators with dual-band kink states
Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF is introduced into photonic systems, and several valley‐Hall photonic topological insulators (PTIs) are experimentally demonstrated. However, i...
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sg-ntu-dr.10356-1383382023-02-28T20:04:27Z Valley-Hall photonic topological insulators with dual-band kink states Chen, Qiaolu Zhang, Li He, Mengjia Wang, Zuojia Lin, Xiao Gao, Fei Yang, Yihao Zhang, Baile Chen, Hongsheng School of Physical and Mathematical Sciences Centre for Disruptive Photonic Technologies The Photonics Institute Science::Physics Dual‐band Kink States Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF is introduced into photonic systems, and several valley‐Hall photonic topological insulators (PTIs) are experimentally demonstrated. However, in the previous valley‐Hall PTIs, topological kink states only work at a single frequency band, which limits potential applications in multiband waveguides, filters, communications, and so on. To overcome this challenge, here a valley‐Hall PTI, where the topological kink states exist at two separated frequency bands, is experimentally demonstrated in a microwave substrate‐integrated circuitry. Both the simulated and experimental results demonstrate the dual‐band valley‐Hall topological kink states are robust against the sharp bends of the internal domain wall with negligible intervalley scattering. This work may pave the way for multichannel substrate‐integrated photonic devices with high efficiency and high capacity for information communications and processing. 2020-05-02T13:10:39Z 2020-05-02T13:10:39Z 2019 Journal Article Chen, Q., Zhang, L., He, M., Wang, Z., Lin, X., Gao, F., . . . Chen, H. (2019). Valley-Hall photonic topological insulators with dual-band kink states. Advanced Optical Materials, 7(15), 1900036-. doi:10.1002/adom.201900036 2195-1071 https://hdl.handle.net/10356/138338 10.1002/adom.201900036 2-s2.0-85065655735 15 7 en Advanced Optical Materials 10.21979/N9/WOK97H © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Optical Materials and is made available with permission of WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. application/pdf |
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Science::Physics Dual‐band Kink States Chen, Qiaolu Zhang, Li He, Mengjia Wang, Zuojia Lin, Xiao Gao, Fei Yang, Yihao Zhang, Baile Chen, Hongsheng Valley-Hall photonic topological insulators with dual-band kink states |
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Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF is introduced into photonic systems, and several valley‐Hall photonic topological insulators (PTIs) are experimentally demonstrated. However, in the previous valley‐Hall PTIs, topological kink states only work at a single frequency band, which limits potential applications in multiband waveguides, filters, communications, and so on. To overcome this challenge, here a valley‐Hall PTI, where the topological kink states exist at two separated frequency bands, is experimentally demonstrated in a microwave substrate‐integrated circuitry. Both the simulated and experimental results demonstrate the dual‐band valley‐Hall topological kink states are robust against the sharp bends of the internal domain wall with negligible intervalley scattering. This work may pave the way for multichannel substrate‐integrated photonic devices with high efficiency and high capacity for information communications and processing. |
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School of Physical and Mathematical Sciences |
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School of Physical and Mathematical Sciences Chen, Qiaolu Zhang, Li He, Mengjia Wang, Zuojia Lin, Xiao Gao, Fei Yang, Yihao Zhang, Baile Chen, Hongsheng |
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Article |
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Chen, Qiaolu Zhang, Li He, Mengjia Wang, Zuojia Lin, Xiao Gao, Fei Yang, Yihao Zhang, Baile Chen, Hongsheng |
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Chen, Qiaolu |
title |
Valley-Hall photonic topological insulators with dual-band kink states |
title_short |
Valley-Hall photonic topological insulators with dual-band kink states |
title_full |
Valley-Hall photonic topological insulators with dual-band kink states |
title_fullStr |
Valley-Hall photonic topological insulators with dual-band kink states |
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Valley-Hall photonic topological insulators with dual-band kink states |
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valley-hall photonic topological insulators with dual-band kink states |
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2020 |
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https://hdl.handle.net/10356/138338 |
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