Regulating vertical domains distribution in ruddlesden-popper perovskites for electroluminescence devices

Regulating vertical domains distribution in ruddlesden-popper perovskites for electroluminescence devices

Efficient perovskite light emitting diodes are designed by employing an ordered vertical domain distribution in quasi 2D perovskites to induce better electron flow to the emitting domains. DMSO is added to the precursor solution to tune the crystallization rate and promote the formation of high m do...

Full description

Saved in:
Bibliographic Details
Main Authors: Yantara, Natalia, Jamaludin, Nur Fadilah, Febriansyah, Benny, Bruno, Annalisa, Tay, Yeow Boon, Mathews, Nripan, Mhaisalkar, Subodh
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Engineering::Materials
Quasi 2D Perovskite
Light Emitting Diode
Online Access:https://hdl.handle.net/10356/138341
https://doi.org/10.21979/N9/P0SMC1
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:Efficient perovskite light emitting diodes are designed by employing an ordered vertical domain distribution in quasi 2D perovskites to induce better electron flow to the emitting domains. DMSO is added to the precursor solution to tune the crystallization rate and promote the formation of high m domains near the substrate surface via the one step deposition method. Optimized deposition conditions yielding film with favorable energetic landscape for both carrier injection and confinement results in a fourfold EQE enhancement with maximum EQE of 5.79%. Better carrier injection is further supported by turn on voltage value that is comparable to the bandgap of the emitter material (~2.25 eV).

Similar Items