Ultralow power dual-gated subthreshold oxide neuristors : an enabler for higher order neuronal temporal correlations

• Main Authors: John, Rohit Abharam, Tiwari, Nidhi, Chen, Yaoyi, Ankit, Tiwari, Naveen, Kulkarni, Mohit, Nirmal, Amoolya, Nguyen, Anh Chien, Basu, Arindam, Mathews, Nripan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Synaptic Transistors; Neuromorphic Computing
• Online Access: https://hdl.handle.net/10356/138428; https://doi.org/10.21979/N9/9VPOSU
• Institution: Nanyang Technological University

Inspired by neural computing, the pursuit of ultralow power neuromorphic architectures with highly distributed memory and parallel processing capability has recently gained more traction. However, emulation of biological signal processing via artificial neuromorphic architectures does not exploit the immense interplay between local activities and global neuromodulations observed in biological neural networks and hence are unable to mimic complex biologically plausible adaptive functions like heterosynaptic plasticity and homeostasis. Here, we demonstrate emulation of complex neuronal behaviors like heterosynaptic plasticity, homeostasis, association, correlation, and coincidence in a single neuristor via a dual-gated architecture. This multiple gating approach allows one gate to capture the effect of local activity correlations and the second gate to represent global neuromodulations, allowing additional modulations which augment their plasticity, enabling higher order temporal correlations at a unitary level. Moreover, the dual-gate operation extends the available dynamic range of synaptic conductance while maintaining symmetry in the weight-update operation, expanding the number of accessible memory states. Finally, operating neuristors in the subthreshold regime enable synaptic weight changes with high gain while maintaining ultralow power consumption of the order of femto-Joules.