Poor photovoltaic performance of Cs3Bi2I9 : an insight through first-principles calculations

• Main Authors: Ghosh, Biplab, Chakraborty, Sudip, Wei, Hao, Guet, Claude, Li, Shuzhou, Mhaisalkar, Subodh, Mathews, Nripan
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Photovoltaics; Lead-free
• Online Access: https://hdl.handle.net/10356/138438; https://doi.org/10.21979/N9/D85F4S
• Institution: Nanyang Technological University

Bismuth-based halide perovskite derivatives have now attracted huge attention for photovoltaic (PV) applications after the unparalleled success of lead-based halide perovskites. However, the performances of PV devices based on these compounds are poor, despite theoretical predictions. In this Article, we have investigated the electronic structure and defect formation energies of Cs3Bi2I9 using density functional theory (DFT) calculations. The calculated electronic bandstructure indicates an indirect bandgap and high carrier effective masses. Our calculations reveal a large stability region for this compound; however, deep level defects are quite prominent. Even the varying chemical potentials from the stoichiometric region do not eliminate the presence of deep defects, ultimately limiting photovoltaic efficiencies.