Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films

Strong spin–orbit coupling, resulting in the formation of spin‐momentum‐locked surface states, endows topological insulators with superior spin‐to‐charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, an all‐optical method is presented, which enables unpr...

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Main Authors: Wang, Xinbo, Cheng, Liang, Zhu, Dapeng, Wu, Yang, Chen, Mengji, Wang, Yi, Zhao, Daming, Boothroyd, Chris Brian, Lam, Yeng Ming, Zhu, Jian-Xin, Battiato, Marco, Song, Justin Chien Wen, Yang, Hyunsoo, Chia, Elbert Ee Min
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/138563
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1385632023-02-28T19:50:15Z Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films Wang, Xinbo Cheng, Liang Zhu, Dapeng Wu, Yang Chen, Mengji Wang, Yi Zhao, Daming Boothroyd, Chris Brian Lam, Yeng Ming Zhu, Jian-Xin Battiato, Marco Song, Justin Chien Wen Yang, Hyunsoo Chia, Elbert Ee Min School of Materials Science & Engineering School of Physical and Mathematical Sciences Science::Physics Spin‐to‐charge Conversion Spintronics Strong spin–orbit coupling, resulting in the formation of spin‐momentum‐locked surface states, endows topological insulators with superior spin‐to‐charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, an all‐optical method is presented, which enables unprecedented tracking of the ultrafast dynamics of spin‐to‐charge conversion in a prototypical topological insulator Bi2Se3/ferromagnetic Co heterostructure, down to the sub‐picosecond timescale. Compared to pure Bi2Se3 or Co, a giant terahertz emission is observed in the heterostructure that originates from spin‐to‐charge conversion, in which the topological surface states play a crucial role. A 0.12 ps timescale is identified that sets a technological speed limit of spin‐to‐charge conversion processes in topological insulators. In addition, it is shown that the spin‐to‐charge conversion efficiency is temperature independent in Bi2Se3 as expected from the nature of the surface states, paving the way for designing next‐generation high‐speed optospintronic devices based on topological insulators at room temperature. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-05-08T05:27:40Z 2020-05-08T05:27:40Z 2018 Journal Article Wang, X., Cheng, L., Zhu, D., Wu, Y., Chen, M., Wang, Y., . . . Chia, E. E. M. (2018). Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films. Advanced Materials, 30(52), 1802356-. doi:10.1002/adma.201802356 0935-9648 https://hdl.handle.net/10356/138563 10.1002/adma.201802356 30370615 2-s2.0-85055706410 52 30 en Advanced Materials © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics
Spin‐to‐charge Conversion
Spintronics
spellingShingle Science::Physics
Spin‐to‐charge Conversion
Spintronics
Wang, Xinbo
Cheng, Liang
Zhu, Dapeng
Wu, Yang
Chen, Mengji
Wang, Yi
Zhao, Daming
Boothroyd, Chris Brian
Lam, Yeng Ming
Zhu, Jian-Xin
Battiato, Marco
Song, Justin Chien Wen
Yang, Hyunsoo
Chia, Elbert Ee Min
Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films
description Strong spin–orbit coupling, resulting in the formation of spin‐momentum‐locked surface states, endows topological insulators with superior spin‐to‐charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, an all‐optical method is presented, which enables unprecedented tracking of the ultrafast dynamics of spin‐to‐charge conversion in a prototypical topological insulator Bi2Se3/ferromagnetic Co heterostructure, down to the sub‐picosecond timescale. Compared to pure Bi2Se3 or Co, a giant terahertz emission is observed in the heterostructure that originates from spin‐to‐charge conversion, in which the topological surface states play a crucial role. A 0.12 ps timescale is identified that sets a technological speed limit of spin‐to‐charge conversion processes in topological insulators. In addition, it is shown that the spin‐to‐charge conversion efficiency is temperature independent in Bi2Se3 as expected from the nature of the surface states, paving the way for designing next‐generation high‐speed optospintronic devices based on topological insulators at room temperature.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Wang, Xinbo
Cheng, Liang
Zhu, Dapeng
Wu, Yang
Chen, Mengji
Wang, Yi
Zhao, Daming
Boothroyd, Chris Brian
Lam, Yeng Ming
Zhu, Jian-Xin
Battiato, Marco
Song, Justin Chien Wen
Yang, Hyunsoo
Chia, Elbert Ee Min
format Article
author Wang, Xinbo
Cheng, Liang
Zhu, Dapeng
Wu, Yang
Chen, Mengji
Wang, Yi
Zhao, Daming
Boothroyd, Chris Brian
Lam, Yeng Ming
Zhu, Jian-Xin
Battiato, Marco
Song, Justin Chien Wen
Yang, Hyunsoo
Chia, Elbert Ee Min
author_sort Wang, Xinbo
title Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films
title_short Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films
title_full Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films
title_fullStr Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films
title_full_unstemmed Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films
title_sort ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films
publishDate 2020
url https://hdl.handle.net/10356/138563
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