Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films
Strong spin–orbit coupling, resulting in the formation of spin‐momentum‐locked surface states, endows topological insulators with superior spin‐to‐charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, an all‐optical method is presented, which enables unpr...
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sg-ntu-dr.10356-1385632023-02-28T19:50:15Z Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films Wang, Xinbo Cheng, Liang Zhu, Dapeng Wu, Yang Chen, Mengji Wang, Yi Zhao, Daming Boothroyd, Chris Brian Lam, Yeng Ming Zhu, Jian-Xin Battiato, Marco Song, Justin Chien Wen Yang, Hyunsoo Chia, Elbert Ee Min School of Materials Science & Engineering School of Physical and Mathematical Sciences Science::Physics Spin‐to‐charge Conversion Spintronics Strong spin–orbit coupling, resulting in the formation of spin‐momentum‐locked surface states, endows topological insulators with superior spin‐to‐charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, an all‐optical method is presented, which enables unprecedented tracking of the ultrafast dynamics of spin‐to‐charge conversion in a prototypical topological insulator Bi2Se3/ferromagnetic Co heterostructure, down to the sub‐picosecond timescale. Compared to pure Bi2Se3 or Co, a giant terahertz emission is observed in the heterostructure that originates from spin‐to‐charge conversion, in which the topological surface states play a crucial role. A 0.12 ps timescale is identified that sets a technological speed limit of spin‐to‐charge conversion processes in topological insulators. In addition, it is shown that the spin‐to‐charge conversion efficiency is temperature independent in Bi2Se3 as expected from the nature of the surface states, paving the way for designing next‐generation high‐speed optospintronic devices based on topological insulators at room temperature. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-05-08T05:27:40Z 2020-05-08T05:27:40Z 2018 Journal Article Wang, X., Cheng, L., Zhu, D., Wu, Y., Chen, M., Wang, Y., . . . Chia, E. E. M. (2018). Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films. Advanced Materials, 30(52), 1802356-. doi:10.1002/adma.201802356 0935-9648 https://hdl.handle.net/10356/138563 10.1002/adma.201802356 30370615 2-s2.0-85055706410 52 30 en Advanced Materials © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. application/pdf |
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Science::Physics Spin‐to‐charge Conversion Spintronics Wang, Xinbo Cheng, Liang Zhu, Dapeng Wu, Yang Chen, Mengji Wang, Yi Zhao, Daming Boothroyd, Chris Brian Lam, Yeng Ming Zhu, Jian-Xin Battiato, Marco Song, Justin Chien Wen Yang, Hyunsoo Chia, Elbert Ee Min Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films |
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Strong spin–orbit coupling, resulting in the formation of spin‐momentum‐locked surface states, endows topological insulators with superior spin‐to‐charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, an all‐optical method is presented, which enables unprecedented tracking of the ultrafast dynamics of spin‐to‐charge conversion in a prototypical topological insulator Bi2Se3/ferromagnetic Co heterostructure, down to the sub‐picosecond timescale. Compared to pure Bi2Se3 or Co, a giant terahertz emission is observed in the heterostructure that originates from spin‐to‐charge conversion, in which the topological surface states play a crucial role. A 0.12 ps timescale is identified that sets a technological speed limit of spin‐to‐charge conversion processes in topological insulators. In addition, it is shown that the spin‐to‐charge conversion efficiency is temperature independent in Bi2Se3 as expected from the nature of the surface states, paving the way for designing next‐generation high‐speed optospintronic devices based on topological insulators at room temperature. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Wang, Xinbo Cheng, Liang Zhu, Dapeng Wu, Yang Chen, Mengji Wang, Yi Zhao, Daming Boothroyd, Chris Brian Lam, Yeng Ming Zhu, Jian-Xin Battiato, Marco Song, Justin Chien Wen Yang, Hyunsoo Chia, Elbert Ee Min |
format |
Article |
author |
Wang, Xinbo Cheng, Liang Zhu, Dapeng Wu, Yang Chen, Mengji Wang, Yi Zhao, Daming Boothroyd, Chris Brian Lam, Yeng Ming Zhu, Jian-Xin Battiato, Marco Song, Justin Chien Wen Yang, Hyunsoo Chia, Elbert Ee Min |
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Wang, Xinbo |
title |
Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films |
title_short |
Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films |
title_full |
Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films |
title_fullStr |
Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films |
title_full_unstemmed |
Ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films |
title_sort |
ultrafast spin‐to‐charge conversion at the surface of topological insulator thin films |
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2020 |
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https://hdl.handle.net/10356/138563 |
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1759856293875548160 |