Electrostatic force-driven oxide heteroepitaxy for interface control

Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the func...

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Main Authors: Ren, Zhaohui, Wu, Mengjiao, Chen, Xing, Li, Wei, Li, Ming, Wang, Fang, Tian, He, Chen, Junze, Xie, Yanwu, Mai, Jiangquan, Li, Xiang, Lu, Xinhui, Lu, Yunhao, Zhang, Hua, Van Tendeloo, Gustaaf, Zhang, Ze, Han, Gaorong
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/138745
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1387452020-06-01T10:01:57Z Electrostatic force-driven oxide heteroepitaxy for interface control Ren, Zhaohui Wu, Mengjiao Chen, Xing Li, Wei Li, Ming Wang, Fang Tian, He Chen, Junze Xie, Yanwu Mai, Jiangquan Li, Xiang Lu, Xinhui Lu, Yunhao Zhang, Hua Van Tendeloo, Gustaaf Zhang, Ze Han, Gaorong School of Materials Science & Engineering Engineering::Materials Electrostatic Force Ferroelectric Polarization Screening Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering. 2020-05-12T06:08:35Z 2020-05-12T06:08:35Z 2018 Journal Article Ren, Z., Wu, M., Chen, X., Li, W., Li, M., Wang, F., . . . Han, G. (2018). Electrostatic force-driven oxide heteroepitaxy for interface control. Advanced Materials, 30(38), 1707017-. doi:10.1002/adma.201707017 0935-9648 https://hdl.handle.net/10356/138745 10.1002/adma.201707017 30080288 2-s2.0-85052655804 38 30 en Advanced Materials © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Engineering::Materials
Electrostatic Force
Ferroelectric Polarization Screening
spellingShingle Engineering::Materials
Electrostatic Force
Ferroelectric Polarization Screening
Ren, Zhaohui
Wu, Mengjiao
Chen, Xing
Li, Wei
Li, Ming
Wang, Fang
Tian, He
Chen, Junze
Xie, Yanwu
Mai, Jiangquan
Li, Xiang
Lu, Xinhui
Lu, Yunhao
Zhang, Hua
Van Tendeloo, Gustaaf
Zhang, Ze
Han, Gaorong
Electrostatic force-driven oxide heteroepitaxy for interface control
description Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Ren, Zhaohui
Wu, Mengjiao
Chen, Xing
Li, Wei
Li, Ming
Wang, Fang
Tian, He
Chen, Junze
Xie, Yanwu
Mai, Jiangquan
Li, Xiang
Lu, Xinhui
Lu, Yunhao
Zhang, Hua
Van Tendeloo, Gustaaf
Zhang, Ze
Han, Gaorong
format Article
author Ren, Zhaohui
Wu, Mengjiao
Chen, Xing
Li, Wei
Li, Ming
Wang, Fang
Tian, He
Chen, Junze
Xie, Yanwu
Mai, Jiangquan
Li, Xiang
Lu, Xinhui
Lu, Yunhao
Zhang, Hua
Van Tendeloo, Gustaaf
Zhang, Ze
Han, Gaorong
author_sort Ren, Zhaohui
title Electrostatic force-driven oxide heteroepitaxy for interface control
title_short Electrostatic force-driven oxide heteroepitaxy for interface control
title_full Electrostatic force-driven oxide heteroepitaxy for interface control
title_fullStr Electrostatic force-driven oxide heteroepitaxy for interface control
title_full_unstemmed Electrostatic force-driven oxide heteroepitaxy for interface control
title_sort electrostatic force-driven oxide heteroepitaxy for interface control
publishDate 2020
url https://hdl.handle.net/10356/138745
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