Electrostatic force-driven oxide heteroepitaxy for interface control

• Main Authors: Ren, Zhaohui, Wu, Mengjiao, Chen, Xing, Li, Wei, Li, Ming, Wang, Fang, Tian, He, Chen, Junze, Xie, Yanwu, Mai, Jiangquan, Li, Xiang, Lu, Xinhui, Lu, Yunhao, Zhang, Hua, Van Tendeloo, Gustaaf, Zhang, Ze, Han, Gaorong
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Electrostatic Force; Ferroelectric Polarization Screening
• Online Access: https://hdl.handle.net/10356/138745
• Institution: Nanyang Technological University

Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.