Monolayer molybdenum disulfide transistors with single-atom-thick gates

• Main Authors: Zhu, Yibo, Li, Yijun, Arefe, Ghidewon, Burke, Robert A., Tan, Cheng, Hao, Yufeng, Liu, Xiaochi, Liu, Xue, Yoo, Won Jong, Dubey, Madan, Lin, Qiao, Hone, James C.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2020
• Subjects: Science::Physics; Molybdenum Disulfide; Graphene Gate
• Online Access: https://hdl.handle.net/10356/139048
• Institution: Nanyang Technological University

Two-dimensional transition-metal dichalcogenides (TMDs) are unique candidates for the development of next-generation electronic devices. However, the large contact resistance between metal and the monolayer TMDs have significantly limited the devices' performance. Also, the integration of ultra...