Interface engineering and emergent phenomena in oxide heterostructures

• Main Authors: Huang, Zhen, Ariando, Wang, Renshaw Xiao, Rusydi, Andrivo, Chen, Jingsheng, Yang, Hyunsoo, Venkatesan, Thirumalai
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Science::Physics; Defect Engineering; Formal Polarization
• Online Access: https://hdl.handle.net/10356/139547
• Institution: Nanyang Technological University

Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.