Resistive switching devices based on halide perovskites

In this Final Year Project, Bismuth-based halide perovskite will be studied and examined, as well as its resistive switching capabilities. The methods of preparation of the film will be described in detail and the equipment used throughout the project will be stated. In order to achieve a good quali...

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Main Author: Yeo, Derek Kai Wen
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2020
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Online Access:https://hdl.handle.net/10356/140101
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1401012023-07-07T18:38:45Z Resistive switching devices based on halide perovskites Yeo, Derek Kai Wen Ang Diing Shenp School of Electrical and Electronic Engineering Zviad Tsakadze EDSAng@ntu.edu.sg Engineering::Electrical and electronic engineering::Semiconductors In this Final Year Project, Bismuth-based halide perovskite will be studied and examined, as well as its resistive switching capabilities. The methods of preparation of the film will be described in detail and the equipment used throughout the project will be stated. In order to achieve a good quality films, several methods were deployed such as increasing the stirring time of the solution during the preparation phase, increasing the precursors DMF/DMSO ratio, conducting the experiments in a different environment (glove box), coating the substrate multiple times, and the variations of thickness of films coated. The results will be described in detail and following which, improvements to be made in the future. Bachelor of Engineering (Electrical and Electronic Engineering) 2020-05-26T07:43:51Z 2020-05-26T07:43:51Z 2020 Final Year Project (FYP) https://hdl.handle.net/10356/140101 en A2017-191 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle Engineering::Electrical and electronic engineering::Semiconductors
Yeo, Derek Kai Wen
Resistive switching devices based on halide perovskites
description In this Final Year Project, Bismuth-based halide perovskite will be studied and examined, as well as its resistive switching capabilities. The methods of preparation of the film will be described in detail and the equipment used throughout the project will be stated. In order to achieve a good quality films, several methods were deployed such as increasing the stirring time of the solution during the preparation phase, increasing the precursors DMF/DMSO ratio, conducting the experiments in a different environment (glove box), coating the substrate multiple times, and the variations of thickness of films coated. The results will be described in detail and following which, improvements to be made in the future.
author2 Ang Diing Shenp
author_facet Ang Diing Shenp
Yeo, Derek Kai Wen
format Final Year Project
author Yeo, Derek Kai Wen
author_sort Yeo, Derek Kai Wen
title Resistive switching devices based on halide perovskites
title_short Resistive switching devices based on halide perovskites
title_full Resistive switching devices based on halide perovskites
title_fullStr Resistive switching devices based on halide perovskites
title_full_unstemmed Resistive switching devices based on halide perovskites
title_sort resistive switching devices based on halide perovskites
publisher Nanyang Technological University
publishDate 2020
url https://hdl.handle.net/10356/140101
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