Localized emission from laser-irradiated defects in 2D hexagonal boron nitride

• Main Authors: Hou, Songyan, Muhammad Danang Birowosuto, Umar, Saleem, Anicet, Maurice Ange, Tay, Roland Yingjie, Coquet, Philippe, Tay, Beng Kang, Wang, Hong, Teo, Edwin Hang Tong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; 2D Materials; Hexagonal Boron Nitride
• Online Access: https://hdl.handle.net/10356/140596
• Institution: Nanyang Technological University

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for photonics device due to its large bandgap and flexibility in nanophotonic circuits. Here, we report bright and localized luminescent centres can be engineered in hBN monolayers and flakes using laser irradiation. The transition from hBN to cBN emerges in laser irradiated hBN large monolayers while is absent in processed hBN flakes. Remarkably, the colour centres in hBN flakes exhibit room temperature cleaner single photon emissions with g 2(0) ranging from 0.20 to 0.42, a narrower line width of 1.4 nm and higher brightness compared with monolayers. Our results pave the way to engineering deterministic defects in hBN induced by laser pulse and show great prospect for application of defects in hBN used as nano-size light source in photonics.