APA Citation

Ong, Z. K., & Ing, N. G. (2020). Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs). Nanyang Technological University.

Chicago Style Citation

Ong, Zi Kai, and Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistors (HEMTs). Nanyang Technological University, 2020.

MLA Citation

Ong, Zi Kai, and Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistors (HEMTs). Nanyang Technological University, 2020.

Warning: These citations may not always be 100% accurate.